NDLI: Resonant levels in bulk thermoelectric semiconductors

Content Provider	Royal Society of Chemistry (RSC)
Author	Heremans, Joseph P. Wiendlocha, Bartlomiej Chamoire, Audrey M.
Copyright Year	2012
Abstract	Distortions of the electronic density of states (DOS) are a potent mechanism to increase the thermopower of thermoelectric semiconductors, thereby increasing their power factor. We review band-structure engineering approaches that have been used to achieve this, resonant impurity levels, dilute Kondo effects, and hybridization effects in strongly correlated electron systems. These can increase the thermoelectric power of metals and semiconductors through two mechanisms: (1) the added density of states increases the thermopower in a nearly temperature-independent way; (2) resonant scattering results in a strong electron energy filtering effect that increases the thermopower at cryogenic temperatures where the electron–phonon interactions are weaker. Electronic structure calculation results for Tl:PbTe and Ti:PbTe are contrasted and identify the origin of the thermopower enhancement in Tl:PbTe. This leads to a discussion of the conditions for DOS distortions to produce thermopower enhancements and illustrates the existence of an optimal degree of delocalization of the impurity states. The experimentally observed resonant levels in several III–V, II–VI, IV–VI and V2-VI3 compound semiconductor systems are reviewed.
Starting Page	5510
Ending Page	5530
Page Count	21
File Format	HTM / HTML PDF
ISSN	17545692
Volume Number	5
Issue Number	2
Journal	Energy & Environmental Science
DOI	10.1039/c1ee02612g
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Kondo Electronic density Thermoelectric effect Power factor Cryogenics List of semiconductor materials
Content Type	Text
Resource Type	Article
Subject	Environmental Chemistry Pollution Renewable Energy, Sustainability and the Environment Nuclear Energy and Engineering

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