NDLI: Fabrication of CuInS<sub>2</sub> and Cu(In,Ga)S<sub>2</sub> thin films by a facile spray pyrolysis and their photovoltaic and photoelectrochemical properties

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Fabrication of CuInS₂ and Cu(In,Ga)S₂ thin films by a facile spray pyrolysis and their photovoltaic and photoelectrochemical properties

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Catalysis Science & Technology Vol - 3 Issue - 6

Catalysis Science & Technology Vol - 3 Issue - 5

Catalysis Science & Technology Vol - 3 Issue - 4

Catalysis Science & Technology Vol - 3 Issue - 3

Catalysis Science & Technology Vol - 3 Issue - 2

Catalysis Science & Technology Vol -2

Catalysis Science & Technology Vol -1

Fabrication of CuInS₂ and Cu(In,Ga)S₂ thin films by a facile spray pyrolysis and their photovoltaic and photoelectrochemical properties

Content Provider	Royal Society of Chemistry (RSC)
Author	Septina, Wilman Ikeda, Shigeru Nonogaki, Midori Gunawan, Gunawan, Harada, Takashi Matsumura, Michio
Copyright Year	2013
Abstract	Polycrystalline CuInS2 chalcopyrite thin films were formed on a Mo-coated glass substrate by annealing of spray deposited precursor films in a sulfur atmosphere. Structural and photoelectrochemical analyses of CuInS2 films obtained by annealing at 500 °C and 600 °C revealed that a well-defined crystalline film was obtained by the 600 °C annealing. Owing to these favorable properties, the solar cell with an Al:ZnO/CdS/CIS/Mo/glass structure based on the 600 °C annealed CuInS2 film showed higher conversion efficiency than that obtained on the cell derived from the 500 °C annealed CuInS2. Partial incorporation of Ga in the CuInS2 film with a Ga/In ratio of ca. 0.2 to form a Cu(In,Ga)S2 mixed crystal without any reduction of photoelectrochemical properties can be achieved by introduction of a Ga source in the sprayed solution. As a result, the solar cell based on the 600 °C annealed Cu(In,Ga)S2 film showed the best conversion efficiency (5.8%) of the present sprayed chalcopyrite films. By introduction of a CdS thin layer followed by loading Pt deposits, moreover, the 600 °C annealed Cu(In,Ga)S2 film worked as a photocathode for photoelectrochemical water splitting with applied bias potential of >0.65 V.
Starting Page	1849
Ending Page	1854
Page Count	6
File Format	HTM / HTML PDF
ISSN	20444753
Volume Number	3
Issue Number	7
Journal	Catalysis Science & Technology
DOI	10.1039/c3cy00020f
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Solar cell Gallium Water splitting Chalcopyrite Commonwealth of Independent States Photocathode Photoelectrochemical cell Sulfur Nucleic acid thermodynamics
Content Type	Text
Resource Type	Article
Subject	Catalysis

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