NDLI: Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

Content Provider	PubMed Central
Author	Cesare, Giampiero De Augusto, Nascetti Caputo, Domenico
Editor	Passaro, Vittorio M. N.
Copyright Year	2015
Abstract	In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied.
Related Links	http://dx.doi.org/10.3390/s150612260
Ending Page	12272
Page Count	13
Starting Page	12260
File Format	PDF
ISSN	14248220
e-ISSN	14248220
Journal	Sensors (Basel, Switzerland)
Issue Number	6
Volume Number	15
Language	English
Publisher	MDPI
Publisher Date	2015-05-01
Access Restriction	Open
Rights Holder	MDPI
Subject Keyword	Electrical and Electronic Engineering Analytical Chemistry Atomic and Molecular Physics, and Optics Biochemistry Research in Higher Education
Content Type	Text
Resource Type	Article
Subject	Medicine Atomic and Molecular Physics, and Optics Instrumentation Analytical Chemistry Biochemistry Information Systems Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

A Smart High Accuracy Silicon Piezoresistive Pressure Sensor Temperature Compensation System

In Situ Measurement of the Junction Temperature of Light Emitting Diodes Using a Flexible Micro Temperature Sensor

An Annular Mechanical Temperature Compensation Structure for Gas-Sealed Capacitive Pressure Sensor

Sensor Fabrication Method for in Situ Temperature and Humidity Monitoring of Light Emitting Diodes

Temperature Modulation of a Catalytic Gas Sensor

Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors

An Embedded Stress Sensor for Concrete SHM Based on Amorphous Ferromagnetic Microwires

Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

Similar Documents

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

A Smart High Accuracy Silicon Piezoresistive Pressure Sensor Temperature Compensation System

In Situ Measurement of the Junction Temperature of Light Emitting Diodes Using a Flexible Micro Temperature Sensor

An Annular Mechanical Temperature Compensation Structure for Gas-Sealed Capacitive Pressure Sensor

Sensor Fabrication Method for in Situ Temperature and Humidity Monitoring of Light Emitting Diodes

Temperature Modulation of a Catalytic Gas Sensor

Micro Cantilever Movement Detection with an Amorphous Silicon Array of Position Sensitive Detectors

An Embedded Stress Sensor for Concrete SHM Based on Amorphous Ferromagnetic Microwires

Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor