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Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
| Content Provider | PubMed Central |
|---|---|
| Author | Sergio, Bietti Esposito, Luca Fedorov, Alexey Ballabio, Andrea Martinelli, Andrea Sanguinetti, Stefano |
| Abstract | We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic force microscopy show that annealing process is able to change density and aspect ratio of InAs quantum dots and also to narrow size distribution. |
| Related Links | http://dx.doi.org/10.1186/s11671-015-0930-3 |
| Starting Page | 247 |
| File Format | |
| ISSN | 1556276X |
| e-ISSN | 1556276X |
| Journal | Nanoscale Research Letters |
| Volume Number | 10 |
| Language | English |
| Publisher | Springer US |
| Access Restriction | Open |
| Rights Holder | Springer US |
| Subject Keyword | Research in Higher Education |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Condensed Matter Physics |