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Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
| Content Provider | Paperity |
|---|---|
| Author | Fujihara, Kousuke Ono, Sachiko Asoh, Hidetaka |
| Abstract | Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved. By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved. |
| Starting Page | 410 |
| File Format | HTM / HTML |
| ISSN | 19317573 |
| DOI | 10.1186/1556-276X-8-410 |
| Issue Number | 1 |
| Journal | Nanoscale Research Letters |
| Volume Number | 8 |
| e-ISSN | 1556276X |
| Language | English |
| Publisher | SpringerOpen |
| Publisher Date | 2013-10-04 |
| Access Restriction | Open |
| Subject Keyword | High aspect ratio Anodic porous alumina Silicon nanohole Metal-assisted chemical etching Electroless deposition Noble metal dot arrays |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology Condensed Matter Physics |
