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Low-temperature optical processing of semiconductor devices using photon effects
| Content Provider | United States Department of Energy Office of Scientific and Technical Information (OSTI.GOV) |
|---|---|
| Author | Sopori, B. L. Cudzinovic, M. Symko, M. |
| Organization | National Renewable Energy Lab., Golden, CO (United States) |
| Abstract | In an RTA process the primary purpose of the optical energy incident on the semiconductor sample is to increase its temperature rapidly. The activation of reactions involved in processes such as the formation of junctions, metal contacts, deposition of oxides or nitrides, takes place purely by the temperature effects. We describe the observation of a number of new photonic effects that take place within the bulk and at the interfaces of a semiconductor when a semiconductor device is illuminated with a spectrally broad-band light. Such effects include changes in the diffusion properties of impurities in the semiconductor, increased diffusivity of impurities across interfaces, and generation of electric fields that can alter physical and chemical properties of the interface. These phenomena lead to certain unique effects in an RTA process that do not occur during conventional furnace annealing under the same temperature conditions. Of particular interest are observations of low-temperature alloying of Si-Al interfaces, enhanced activation of phosphorus in Si during drive-in, low-temperature oxidation of Si, and gettering of impurities at low-temperatures under optical illumination. These optically induced effects, in general, diminish with an increase in the temperature, thus allowing thermally activated reaction rates to dominate at higher temperatures. |
| Related Links | https://www.osti.gov/biblio/415151 |
| Page Count | 160 |
| File Format | |
| Language | English |
| Publisher Date | 1995-08-01 |
| Publisher Place | United States |
| Access Restriction | Open |
| Subject Keyword | MATERIALS SCIENCE SOLAR ENERGY SILICON PROCESSING ANNEALING GETTERING IMPURITIES OXIDATION PHOSPHORUS SEMICONDUCTOR DEVICES SOLAR CELLS TEMPERATURE DEPENDENCE |
| Content Type | Text |
| Resource Type | Article |
