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XPS and UPS Investigation of NH4OH-Exposed Cu(In,Ga)Se2 Thin Films
| Content Provider | United States Department of Energy Office of Scientific and Technical Information (OSTI.GOV) |
|---|---|
| Author | Perkins, C. L. Hasoon, F. S. Al-Thani, H. A. Asher, S. E. Sheldon, P. |
| Organization | National Renewable Energy Lab., Golden, CO (US) |
| Abstract | Photoelectron spectroscopy was used to determine the compositional and electronic changes occurring in Cu(In,Ga)Se2 thin films as a result of immersion in aqueous ammonia solution. We find that NH4OH-treated CIGS surfaces are preferentially etched of indium and gallium, resulting in the formation of a thin layer of a degenerate Cu-Se compound that we tentatively identify as Cu2Se. The work function of ammonia-treated samples is found to increase by 0.6 eV relative to as-grown CIGS thin films. The uniformity of chemical bath effects (etching & deposition) was found to be improved by the addition to the bath of a non-ionic surfactant. Initial device results show that the new surfactant-based chemical bath deposition (CBD) method may lead to better and thinner CdS buffer layers. |
| Sponsorship | US Department of Energy (US) |
| Related Links | https://www.osti.gov/biblio/15016463 |
| Page Count | 7 |
| File Format | |
| Language | English |
| Publisher Date | 2005-02-01 |
| Publisher Place | United States |
| Access Restriction | Open |
| Subject Keyword | SOLAR ENERGY MATERIALS SCIENCE AMMONIA BUFFERS DEPOSITION ETCHING GALLIUM INDIUM PHOTOELECTRON SPECTROSCOPY THIN FILMS WORK FUNCTIONS XRAY PHOTOELECTRON SPECTROSCOPY PV CHEMICAL BATH DEPOSITION (CBD) THIN FILM NONIONIC SURFACTANT BUFFER LAYERS INDIUM AND GALLIUM SOLAR ENERGY PHOTOVOLTAICS |
| Content Type | Text |
| Resource Type | Article |
