NDLI: Novel Capacitance Measurements in Copper Indium Gallium Diselenide Alloys: Final Subcontract Report, 1 July 1999--31 August 2003

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Novel Capacitance Measurements in Copper Indium Gallium Diselenide Alloys: Final Subcontract Report, 1 July 1999--31 August 2003

Content Provider	United States Department of Energy Office of Scientific and Technical Information (OSTI.GOV)
Author	Johnson, D. C.
Organization	National Renewable Energy Lab., Golden, CO (US)
Abstract	This subcontract report describes the University of Oregon's objectives to measure the electronic properties of the copper indium/gallium diselenide alloys using several well-developed capacitance techniques appropriate for probing materials with a continuous distribution of semiconducting gap electronic energy states. We applied a new synthetic method to the production of CIGS alloys, namely, the modulated elemental reactant method. To form CIGS by this method, alternating layers of Cu:In:Se and Cu:Ga:Se composites, each less than 100 thick, were evaporated in sequence and then annealed at low temperature. A second focus was to test and develop junction capacitance methods to better understand the electronic properties in CIGS material and establish a relationship of those properties to specific device performance parameters. The primary methods employed were transient photocapacitance (TPC) spectroscopy and drive-level capacitance profiling (DLCP). Finally, we extended our characterization studies to four CuIn1-xAlxSe2 (CIAS) samples, also supplied by IEC. Our photocapacitance and DLCP measurements on these CIAS samples indicated that for a sample with 13 at.% Al (having a bandgap of nearly 1.2 eV), the electronic properties were essentially identical to those in CIGS samples with 26 at.% Ga.
Sponsorship	US Department of Energy (US)
Related Links	https://www.osti.gov/biblio/15007675
Page Count	38
File Format	PDF
DOI	10.2172/15007675
Language	English
Publisher Date	2004-05-01
Publisher Place	United States
Access Restriction	Open
Subject Keyword	SOLAR ENERGY MATERIALS SCIENCE ALLOYS CAPACITANCE COPPER DISTRIBUTION GALLIUM INDIUM PERFORMANCE PRODUCTION SPECTROSCOPY TRANSIENTS PV THIN FILM SOLAR CELL MODULATED ELEMENTAL REACTANT METHOD JUNCTION CAPACITANCE ELECTRONIC PROPERTIES DEVICE TRANSIENT PHOTOCAPACITANCE (TPC) DRIVE-LEVEL CAPACITANCE PROFILING (DLCP) BANDGAP COPPER INDIUM GALLIUM DISELENIDE SOLAR ENERGY - PHOTOVOLTAICS
Content Type	Text
Resource Type	Technical Report

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