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Growth of graphene on 6H-SiC by molecular dynamics simulation
| Content Provider | Open Access Library (OALib) |
|---|---|
| Author | N. Jakse R. Arifin S. K. Lai |
| Abstract | Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simulation results, we tested two empirical potentials and evaluated their reliability by the calculated characteristics of graphene, its carbon-carbon bond-length, pair correlation function, and binding energy. |
| ISSN | 1607324X |
| Journal | Condensed Matter Physics |
| Publisher | Institute for Condensed Matter Physics |
| Publisher Date | 2011-01-01 |
| Access Restriction | Open |
| Subject Keyword | Molecular dynamics Epitaxial growth Graphene |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics |