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Problems with Evaluation of Micro-Pore Size in Silicon Carbide Using Synchrotron X-ray Phase Contrast Imaging
| Content Provider | MDPI |
|---|---|
| Author | Argunova, Tatiana S. Kohn, Victor G. |
| Copyright Year | 2022 |
| Description | We report near- and far-field computer simulations of synchrotron X-ray phase-contrast images using a micropipe in a SiC crystal as a model system. Experimental images illustrate the theoretical results. The properties of nearly perfect single crystals of silicon carbide are strongly affected by μm-sized pores even if their distribution in a crystal bulk is sparse. A non-destructive technique to reveal the pores is in-line phase-contrast imaging with synchrotron radiation. A quantitative approach to evaluating pore sizes is the use of computer simulations of phase-contrast images. It was found that near-field phase-contrast images are formed at very short distances behind a sample. We estimated these distances for tiny pores. The Fresnel zones did not provide any information on the pore size in the far-field, but a contrast value within the first Fresnel zone could be used for simulations. Finally, general problems in evaluating a micro-pore size via image analysis are discussed. |
| Starting Page | 856 |
| e-ISSN | 19961944 |
| DOI | 10.3390/ma15030856 |
| Journal | Materials |
| Issue Number | 3 |
| Volume Number | 15 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-01-23 |
| Access Restriction | Open |
| Subject Keyword | Materials Micro-pores in Single Crystals X-ray Imaging Phase Contrast Synchrotron Radiation |
| Content Type | Text |
| Resource Type | Article |
