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Effects of Polysilane Addition to Chlorobenzene and High Temperature Annealing on $CH_{3}NH_{3}PbI_{3}$ Perovskite Photovoltaic Devices
| Content Provider | MDPI |
|---|---|
| Author | Oku, Takeo Taguchi, Masaya Suzuki, Atsushi Kitagawa, Kaede Asakawa, Yugo Yoshida, Satoshi Okita, Masanobu Minami, Satoshi Fukunishi, Sakiko Tachikawa, Tomoharu |
| Copyright Year | 2021 |
| Description | $CH_{3}NH_{3}PbI_{3}$ perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140–260 °C. The photoconversion efficiencies of the DPPS-treated device remained high even after 255 days in ambient air. Raman scattering spectroscopy and ab initio molecular orbital calculations of DPPS suggested that it increased hole transport efficiency in the treated devices, which was confirmed from the high shunt resistances of the DPPS-treated devices. |
| Starting Page | 665 |
| e-ISSN | 20796412 |
| DOI | 10.3390/coatings11060665 |
| Journal | Coatings |
| Issue Number | 6 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-05-31 |
| Access Restriction | Open |
| Subject Keyword | Coatings Perovskite Ch3nh3pbi3 Solar Cells Polysilane Decaphenylcyclopentasilane Stability Chlorobenzene Calculation Raman Scattering |
| Content Type | Text |
| Resource Type | Article |
