Loading...
Please wait, while we are loading the content...
Similar Documents
Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
| Content Provider | MDPI |
|---|---|
| Author | Wang, Jian-Huan Wang, Ting Zhang, Jian-Jun |
| Copyright Year | 2021 |
| Description | Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs. |
| Starting Page | 788 |
| e-ISSN | 20794991 |
| DOI | 10.3390/nano11030788 |
| Journal | Nanomaterials |
| Issue Number | 3 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-03-19 |
| Access Restriction | Open |
| Subject Keyword | Nanomaterials Quantum Science and Technology In-plane Nanowire Site-controlled Epitaxial Growth Silicon Germanium Nanowire-based Quantum Devices |
| Content Type | Text |
| Resource Type | Article |
