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Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers
| Content Provider | MDPI |
|---|---|
| Author | Berzins, Andris Grube, Hugo Sprugis, Einars Vaivars, Guntars Fescenko, Ilja |
| Copyright Year | 2022 |
| Abstract | The implantation of diamonds with helium ions has become a common method to create hundreds-nanometers-thick near-surface layers of NV centers for high-sensitivity sensing and imaging applications; however, optimal implantation dose and annealing temperature are still a matter of discussion. In this study, we irradiated HPHT diamonds with an initial nitrogen concentration of 100 ppm using different implantation doses of helium ions to create 200-nm thick NV layers. We compare a previously considered optimal implantation dose of ∼ |
| Starting Page | 2234 |
| e-ISSN | 20794991 |
| DOI | 10.3390/nano12132234 |
| Journal | Nanomaterials |
| Issue Number | 13 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-06-29 |
| Access Restriction | Open |
| Subject Keyword | Nanomaterials Nuclear Energy and Engineering Nitrogen-vacancy Centers He Ion Implantation Diamond Annealing Dense Nv Layers |
| Content Type | Text |
| Resource Type | Article |