NDLI: Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC

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Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC

Content Provider	MDPI
Author	Serban, Andreea Ene, Vladimir Dinescu, Doru Zai, Iulia Djourelov, Nikolay Vasile, Bogdan Leca, Victor
Copyright Year	2021
Abstract	Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the dislocation densities together with the defect correlation lengths are investigated via High-Resolution X-ray Diffraction (HR-XRD) and the characteristic positron diffusion length is achieved by Doppler Broadening Spectroscopy (DBS). Moreover, a comparative analysis with our previous work (i.e., GaN/AlN/Si and GaN/AlN/Al₂O₃) has been carried out. Within the epitaxial GaN layer defined by the relationship $F \bar{4} 3 m$ (111) 3C-SiC \|\| $P 63 m c$ (0002) AlN \|\| $P 63 m c$ (0002) GaN, the total dislocation density has been assessed as being 1.47 × 10¹⁰ cm⁻². Compared with previously investigated heterostructures (on Si and Al₂O₃ substrates), the obtained dislocation correlation lengths (L^e = 171 nm and L^s =288 nm) and the mean distance between two dislocations (r_d = 82 nm) are higher. This reveals an improved crystal quality of the GaN with SiC as a growth template. In addition, the DBS measurements upheld the aforementioned results with a higher effective positron diffusion length $L_{eff}^{GaN 2}$ = 75 ± 20 nm for the GaN layer.
Starting Page	1299
e-ISSN	20794991
DOI	10.3390/nano11051299
Journal	Nanomaterials
Issue Number	5
Volume Number	11
Language	English
Publisher	MDPI
Publisher Date	2021-05-14
Access Restriction	Open
Subject Keyword	Nanomaterials Nuclear Energy and Engineering Gallium Nitride Epitaxial Thin Films Defect Density Positron Diffusion Length
Content Type	Text
Resource Type	Article

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