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Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
| Content Provider | MDPI |
|---|---|
| Author | Thomas, Kämpfe Neuber, Markus Lederer, Maximilian Walter Mertens, Konstantin Czernohorsky, Malte Seidel, Konrad |
| Copyright Year | 2022 |
| Description | Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal treatments. Due to its very confined doping concentration range, $Si:HfO_{2}$ layers based on thermal atomic layer deposition often exhibited a crossflow pattern across 300 mm wafer. Here, plasma enhanced atomic layer deposition is explored as an alternative method for producing Si-doped $HfO_{2}$ layers, and their ferroelectric and pyroelectric properties are compared. |
| Starting Page | 1115 |
| e-ISSN | 20734352 |
| DOI | 10.3390/cryst12081115 |
| Journal | Crystals |
| Issue Number | 8 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-08-09 |
| Access Restriction | Open |
| Subject Keyword | Crystals Hafnium Oxide Ferroelectric Pyroelectric Plasma Enhanced Atomic Layer Deposition X-ray Diffraction |
| Content Type | Text |
| Resource Type | Article |
