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Solution-Processed NiO as a Hole Injection Layer for Stable Quantum Dot Light-Emitting Diodes
| Content Provider | MDPI |
|---|---|
| Author | Lee, Sangwon Kim, Youngjin Kim, Jiwan |
| Copyright Year | 2021 |
| Description | In this work, we fabricated quantum dot light-emitting diodes using solution-processed NiO as the hole injection layer to replace the commonly used poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS) layer. We successfully prepared NiO films by spin coating the NiO precursor, then annealing them, and then treating them with UV-ozone under optimized conditions. The best device with the NiO film shows higher current efficiency (25.1 cd/A) than that with the PEDOT:PSS layer (22.3 cd/A). Moreover, the long-term stability of the devices with NiO which is annealed at 500 °C is improved substantially. These results suggest that the NiO layer can be a good alternative for developing stable devices. |
| Starting Page | 4422 |
| e-ISSN | 20763417 |
| DOI | 10.3390/app11104422 |
| Journal | Applied Sciences |
| Issue Number | 10 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-05-13 |
| Access Restriction | Open |
| Subject Keyword | Applied Sciences Quantum Science and Technology |
| Content Type | Text |
| Resource Type | Article |
