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Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
| Content Provider | MDPI |
|---|---|
| Author | Ning, Honglong Zeng, Xuan Zhang, Hongke Zhang, Xu Yao, Rihui Liu, Xianzhe Luo, Dongxiang Xu, Zhuo Hui Ye, Qiannan Peng, Junbiao |
| Copyright Year | 2021 |
| Description | Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility $(μ_{sat}$) of 7.9 $cm^{2}$/V·s, an $I_{on}/I_{off}$ ratio of 4.58 × $10^{6}$, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications. |
| Starting Page | 29 |
| e-ISSN | 20770375 |
| DOI | 10.3390/membranes12010029 |
| Journal | Membranes |
| Issue Number | 1 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-12-27 |
| Access Restriction | Open |
| Subject Keyword | Membranes Thin Film Transistors Flexible Fully Transparent Oxide |
| Content Type | Text |
| Resource Type | Article |
