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A Study on Solution-Processed $Y_{2}O_{3}$ Films Modified by Atomic Layer Deposition $Al_{2}O_{3}$ as Dielectrics in ZnO Thin Film Transistor
| Content Provider | MDPI |
|---|---|
| Author | Xu, Haiyang Ding, Xingwei Qi, Jie Yang, Xuyong Zhang, Jianhua |
| Copyright Year | 2021 |
| Description | In this work, $Y_{2}O_{3}–Al_{2}O_{3}$ dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The $Y_{2}O_{3}$ film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer in TFT, which then leads to poor stability of the devices. We modified it by atomic layer deposition (ALD) technology that deposited a thin $Al_{2}O_{3}$ film on the surface of a $Y_{2}O_{3}$ dielectric layer, and finally fabricated a TFT device with ZnO as the active layer by ALD. The electrical performance and bias stability of the ZnO TFT with a $Y_{2}O_{3}–Al_{2}O_{3}$ laminated dielectric layer were greatly improved, the subthreshold swing was reduced from 147 to 88 mV/decade, the on/off-state current ratio was increased from 4.24 × $10^{6}$ to 4.16 × $10^{8}$, and the threshold voltage shift was reduced from 1.4 to 0.7 V after a 5-V gate was is applied for 800 s. |
| Starting Page | 969 |
| e-ISSN | 20796412 |
| DOI | 10.3390/coatings11080969 |
| Journal | Coatings |
| Issue Number | 8 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-08-15 |
| Access Restriction | Open |
| Subject Keyword | Coatings Nuclear Energy and Engineering Y2o3 Films Y2o3–al2o3 Laminated Dielectric Atomic Layer Deposition Thin Film Transistors |
| Content Type | Text |
| Resource Type | Article |
