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Deposition Mechanism and Characterization of Plasma-Enhanced Atomic Layer-Deposited $SnO_{x}$ Films at Different Substrate Temperatures
| Content Provider | MDPI |
|---|---|
| Author | Huang, Pao-Hsun Zhang, Zhi-Xuan Hsu, Chia-Hsun Wu, Wan-Yu Ou, Sin-Liang Huang, Chien-Jung Wuu, Dong-Sing Lien, Shui-Yang Zhu, Wen-Zhang |
| Copyright Year | 2022 |
| Description | The promising functional tin oxide $(SnO_{x}$) has attracted tremendous attention due to its transparent and conductive properties. The stoichiometric composition of $SnO_{x}$ can be described as common n-type $SnO_{2}$ and p-type $Sn_{3}O_{4}$. In this study, the functional $SnO_{x}$ films were prepared successfully by plasma-enhanced atomic layer deposition (PEALD) at different substrate temperatures from 100 to 400 °C. The experimental results involving optical, structural, chemical, and electrical properties and morphologies are discussed. The $SnO_{2}$ and oxygen-deficient $Sn_{3}O_{4}$ phases coexisting in PEALD $SnO_{x}$ films were found. The PEALD $SnO_{x}$ films are composed of intrinsic oxygen vacancies with $O-Sn^{4+}$ bonds and then transformed into a crystalline $SnO_{2}$ phase with increased substrate temperature, revealing a direct 3.5–4.0 eV band gap and 1.9–2.1 refractive index. Lower (300 °C) substrate temperatures can cause precursor condensation and desorption, respectively, resulting in reduced film qualities. The proper composition ratio of O to Sn in PEALD $SnO_{x}$ films near an estimated 1.74 suggests the highest mobility of 12.89 $cm^{2}$ $V^{−1}$ $s^{−1}$ at 300 °C. |
| Starting Page | 2859 |
| e-ISSN | 20794991 |
| DOI | 10.3390/nano12162859 |
| Journal | Nanomaterials |
| Issue Number | 16 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-08-19 |
| Access Restriction | Open |
| Subject Keyword | Nanomaterials Coatings and Films Tin Oxide (snox) Plasma-enhanced Atomic Layer Deposition (peald) Substrate Temperature |
| Content Type | Text |
| Resource Type | Article |
