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Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate
| Content Provider | MDPI |
|---|---|
| Author | Kim, Dahye Shin, Jiwoong Kim, Sungjun |
| Copyright Year | 2021 |
| Description | In this work, we conducted the following analysis of Ni/ZnO (20 nm)/n-type Si RRAM device with three different compliance currents (CCs). We compared I–V curves, including set, reset voltages, and resistance of LRS, HRS states for each CCs. For an accurate comparison of each case, statistical analysis is presented. In each case, the average value and the relative standard deviation (RSD) of resistance are calculated to analyze the characteristics of the distribution. The best variability is observed at higher CC (5 mA). In addition, we validated the non-volatile properties of the device using the retention data for each of the CCs. Based on this comparison, we proposed the most appropriate CC of the device operation. Also, a pulse was applied to measure the current waveform and demonstrate the regular operation of the device. Finally, the resistance of LRS and HRS states was measured by pulse. We statistically compared the measured pulse data with the DC data. |
| Starting Page | 1572 |
| e-ISSN | 20754701 |
| DOI | 10.3390/met11101572 |
| Journal | Metals |
| Issue Number | 10 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-10-01 |
| Access Restriction | Open |
| Subject Keyword | Metals Memory Device Resistive Switching Memristor Zno |
| Content Type | Text |
| Resource Type | Article |
