Loading...
Please wait, while we are loading the content...
Similar Documents
Interfacial Polarization of Thin $Alq_{3}$, $Gaq_{3}$, and $Erq_{3}$ Films on GaN(0001)
| Content Provider | MDPI |
|---|---|
| Author | Rafa, ł Lewandków Grodzicki, Miłosz Sito, Jakub Mazur, Piotr Ciszewski, Antoni |
| Copyright Year | 2022 |
| Description | This report presents results of research on electronic structure of three interfaces composed of organic layers of $Alq_{3}$, $Gaq_{3}$, or $Erq_{3}$ deposited on GaN semiconductor. The formation of the interfaces and their characterization have been performed in situ under ultrahigh vacuum conditions. Thin layers have been vapor-deposited onto p-type GaN(0001) surfaces. Ultraviolet photoelectron spectroscopy (UPS) assisted by X-ray photoelectron spectroscopy (XPS) has been employed to construct the band energy diagrams of the substrate and interfaces. The highest occupied molecular orbitals (HOMOs) are found to be at 1.2, 1.7, and 2.2 eV for $Alq_{3}$, $Gaq_{3}$, and $Erq_{3}$ layers, respectively. $Alq_{3}$ layer does not change the position of the vacuum level of the substrate, in contrast to the other layers, which lower it by 0.8 eV $(Gaq_{3}$) and 1.3 eV $(Erq_{3}$). Interface dipoles at the phase boundaries are found to be −0.2, −0.9, −1.2 eV, respectively, for $Alq_{3}$, $Gaq_{3}$, $Erq_{3}$ layers on GaN(0001) surfaces. |
| Starting Page | 1671 |
| e-ISSN | 19961944 |
| DOI | 10.3390/ma15051671 |
| Journal | Materials |
| Issue Number | 5 |
| Volume Number | 15 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-02-23 |
| Access Restriction | Open |
| Subject Keyword | Materials Information and Library Science Mq3 Gan Polarization Organic Layers Electronic Structure |
| Content Type | Text |
| Resource Type | Article |
