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Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature
| Content Provider | MDPI |
|---|---|
| Author | Iba, Satoshi Okamoto, Ryogo Obu, Koki Obata, Yuma Ohno, Yuzo |
| Copyright Year | 2021 |
| Description | We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes $(τ_{PL}$), and electron spin relaxation times $(τ_{s}$) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature $T_{g}$ (430–600 °C) and a high V/III flux ratio using $As_{2}$. At 530 °C < $T_{g}$ < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in $τ_{PL}$~40 ns at RT, one order of magnitude longer than those reported so far. Long $τ_{s}$ (~6 ns) is also observed at RT. |
| Starting Page | 1112 |
| e-ISSN | 2072666X |
| DOI | 10.3390/mi12091112 |
| Journal | Micromachines |
| Issue Number | 9 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-09-16 |
| Access Restriction | Open |
| Subject Keyword | Micromachines Molecular Beam Epitaxy Gaas (110) Photoluminescence Spin Relaxation |
| Content Type | Text |
| Resource Type | Article |
