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Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding
| Content Provider | MDPI |
|---|---|
| Author | Yamamoto, Michitaka Matsumae, Takashi Kurashima, Yuichi Takagi, Hideki Suga, Tadatomo Takamatsu, Seiichi Itoh, Toshihiro Higurashi, Eiji |
| Copyright Year | 2020 |
| Description | Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15–500 nm) and surface roughness (0.3–1.6 nm) on room-temperature pressureless wafer bonding and sealing. The root-mean-square surface roughness and grain size of sputtered Au thin films on Si and glass wafers increased with the film thickness. The bonded area was more than 85% of the total wafer area when the film thickness was 100 nm or less and decreased as the thickness increased. Room-temperature wafer-scale vacuum sealing was achieved when Au thin films with a thickness of 50 nm or less were used. These results suggest that Au-Au SAB using ultrathin Au films is useful in achieving room-temperature wafer-level hermetic and vacuum packaging of microelectromechanical systems and optoelectronic devices. |
| Starting Page | 454 |
| e-ISSN | 2072666X |
| DOI | 10.3390/mi11050454 |
| Journal | Micromachines |
| Issue Number | 5 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2020-04-27 |
| Access Restriction | Open |
| Subject Keyword | Micromachines Manufacturing Engineering Heterogeneous Integration Wafer Bonding Wafer Sealing Room-temperature Bonding Au-au Bonding Surface Activated Bonding Au Film Thickness Surface Roughness |
| Content Type | Text |
| Resource Type | Article |
