Loading...
Please wait, while we are loading the content...
Similar Documents
High-Temperature Annealing Effects on Atomically Thin Tungsten Diselenide Field-Effect Transistor
| Content Provider | MDPI |
|---|---|
| Author | Khan, Muhammad Atif Mehmood, Muhammad Qasim Massoud, Yehia |
| Copyright Year | 2022 |
| Description | Two-dimensional (2D) material-based devices are expected to operate under high temperatures induced by Joule heating and environmental conditions when integrated into compact integrated circuits for practical applications. However, the behavior of these materials at high operating temperatures is obscure as most studies emphasize only room temperature or low-temperature operation. Here, the high-temperature electrical response of the tungsten diselenide $(WSe_{2}$) field-effect transistor was studied. It is revealed that 350 K is the optimal annealing temperature for the $WSe_{2}$ transistor, and annealing at this temperature improves on-current, field-effect mobility and on/off ratio around three times. Annealing beyond this temperature (360 K to 670 K) adversely affects the device performance attributed to the partial oxidation of $WSe_{2}$ at higher temperatures. An increase in hysteresis also confirms the formation of new traps as the device is annealed beyond 350 K. These findings explicate the thermal stability of $WSe_{2}$ and can help design 2D materials-based durable devices for high-temperature practical applications. |
| Starting Page | 8119 |
| e-ISSN | 20763417 |
| DOI | 10.3390/app12168119 |
| Journal | Applied Sciences |
| Issue Number | 16 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-08-13 |
| Access Restriction | Open |
| Subject Keyword | Applied Sciences Industrial Engineering Annealing 2d Materials Wse2 Mobility Field-effect Transistor Thermal Stability |
| Content Type | Text |
| Resource Type | Article |
