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Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets
| Content Provider | MDPI |
|---|---|
| Author | Erick, Gastellóu Godofredo, García Rafael, García Jorge, Rodríguez Yani, Ramírez Herrera, Ana Morales, Crisoforo Hirata, Gustavo Rosendo, Enrique Luna, José Robles, Mario |
| Copyright Year | 2021 |
| Description | GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance of nano-crystallites with an average of 7 nm. Scanning electron microscopy and transmission electron microscopy showed good adherence to silicon non-native substrate, as well as homogeneity, with a grain size average of 0.14 µm, and 0.16 µm for the GaN films doped with Zn or Mg, respectively. X-ray photo-electron spectroscopy demonstrated the presence of a very small amount of magnesium (2.10 mol%), and zinc (1.15 mol%) with binding energies of 1303.18, and 1024.76 eV, respectively. Photoluminescence spectrum for the Zn-doped GaN films had an emission range from 2.89 to 3.0 eV (429.23–413.50 nm), while Mg-doped GaN films had an energy emission in a blue-violet band with a range from 2.80 to 3.16 eV (443.03–392.56 nm). Raman spectra showed the classical vibration modes $A_{1}$(TO), $E_{1}$(TO), and $E_{2}$(High) for the hexagonal structure of GaN. |
| Starting Page | 6990 |
| e-ISSN | 20763417 |
| DOI | 10.3390/app11156990 |
| Journal | Applied Sciences |
| Issue Number | 15 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-07-29 |
| Access Restriction | Open |
| Subject Keyword | Applied Sciences Spectroscopy Target Gan Radio-frequency Magnetron Sputtering Incorporation Film |
| Content Type | Text |
| Resource Type | Article |
