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Broadband Class-J GaN Doherty Power Amplifier
| Content Provider | MDPI |
|---|---|
| Author | Nasri, Abbas Estebsari, Motahhareh Toofan, Siroos Piacibello, Anna Pirola, Marco Camarchia, Vittorio Ramella, Chiara |
| Copyright Year | 2022 |
| Description | This paper presents a broadband 3–3.7 GHz class-J Doherty power amplifier exploiting second harmonic tuning in the output network. Furthermore, the output impedance inverter is eliminated and its effect is embedded in the main device’s output matching network, thus trading off among bandwidth, efficiency, and gain. The proposed amplifier adopts two 10 W packaged GaN transistors, and it achieves in measurement 60–74%, and 46–50% drain efficiency at saturation and 6 dB output back-off, respectively, with a saturated output power of 43–44.2 dBm and a small-signal gain of 10–13 dB. The proposed DPA exhibits a simulated adjacent channel power ratio less than −30 dBc at 36 dBm average output power, when a 16-QAM modulation with 5 MHz bandwidth is applied to the 3.5 GHz carrier. |
| Starting Page | 552 |
| e-ISSN | 20799292 |
| DOI | 10.3390/electronics11040552 |
| Journal | Electronics |
| Issue Number | 4 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-02-12 |
| Access Restriction | Open |
| Subject Keyword | Electronics Industrial Engineering Back-off Class-j Doherty Power Amplifier Gan Hemt High Efficiency Linearity |
| Content Type | Text |
| Resource Type | Article |
