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Irregular Resistive Switching Behaviors of $Al_{2}O_{3}$-Based Resistor with Cu Electrode
| Content Provider | MDPI |
|---|---|
| Author | Ryu, Hojeong Kim, Sungjun |
| Copyright Year | 2021 |
| Description | In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and the low-resistance state (LRS). Both high reset current (~10 mA) and low reset current (<100 μA) coexisted in the bipolar resistive switching. We investigated nonideal resistive switching behaviors such as negative-set and current overshoot, which could lead to resistive switching failure. |
| Starting Page | 653 |
| e-ISSN | 20754701 |
| DOI | 10.3390/met11040653 |
| Journal | Metals |
| Issue Number | 4 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-04-17 |
| Access Restriction | Open |
| Subject Keyword | Metals Hardware and Architecturee Nuclear Energy and Engineering Memristor Resistive Switching Metal Oxides Resistive Switching Failure |
| Content Type | Text |
| Resource Type | Article |
