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Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage
| Content Provider | MDPI |
|---|---|
| Author | Koo, Kyung Min Chung, Woo Young Lee, Sang Yi Yoon, Gyu Han Choi, Woo Young |
| Copyright Year | 2021 |
| Description | With the downscaling in device sizes, process-induced parameter variation has emerged as one of the most serious problems. In particular, the parameter fluctuation of the dynamic random access memory (DRAM) sense amplifiers causes an offset voltage, leading to sensing failure. Previous studies indicate that the threshold voltage mismatch between the paired transistors of a sense amplifier is the most critical factor. In this study, virtual wafers were generated, including statistical $V_{T}$ variation. Then, we numerically investigate the prediction accuracy and reliability of the offset voltage of DRAM wafers using test point measurement for the first time. We expect that this study will be helpful in strengthening the in-line controllability of wafers to secure the DRAM sensing margin. |
| Starting Page | 1145 |
| e-ISSN | 2072666X |
| DOI | 10.3390/mi12101145 |
| Journal | Micromachines |
| Issue Number | 10 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-09-23 |
| Access Restriction | Open |
| Subject Keyword | Micromachines Dynamic Random Access Memory Sense Amplifier Sensitivity Offset Voltage Variation Threshold Voltage Mismatch |
| Content Type | Text |
| Resource Type | Article |
