NDLI: Fabrication and Characterization of $In_{0.9}Ga

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Fabrication and Characterization of $In_{0.9}Ga_{0.1}$O EGFET pH Sensors

Content Provider	MDPI
Author	Chen, Chia-Hsun Liu, Shu-Bai Chang, Sheng-Po
Copyright Year	2021
Description	In this study, the $In_{0.9}Ga_{0.1}$O sensing membrane were deposited by using the RF magnetron sputtering at room temperature and combined with commercial MOSFETs as the extended gate field effect transistor (EGFET) pH sensors. The sensing performance of the $In_{0.9}Ga_{0.1}$O EGFET pH sensors were measured and analyzed in the pH value of range between 2 to 12. In the saturation region, the pH current sensitivity calculated from the linear relationship between the $IDS$ and pH value was approximately 56.64 μA/pH corresponding to the linearity of 97.8%. In the linear region, the pH voltage sensitivity exhibited high sensitivity and linearity of 43.7 mV/pH and 96.3%, respectively. The $In_{0.9}Ga_{0.1}$O EGFET pH sensors were successfully fabricated and exhibited great linearity. The analyzed results indicated that the $In_{0.9}Ga_{0.1}$O was a robust material as a promising sensing membrane and effectively used for pH sensing detection application.
Starting Page	929
e-ISSN	20796412
DOI	10.3390/coatings11080929
Journal	Coatings
Issue Number	8
Volume Number	11
Language	English
Publisher	MDPI
Publisher Date	2021-08-03
Access Restriction	Open
Subject Keyword	Coatings Extended Gate Field Effect Transistor In0.9ga0.1o Sensing Membrane
Content Type	Text
Resource Type	Article

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