Loading...
Please wait, while we are loading the content...
$CuInSe_{2}$-Based Near-Infrared Photodetector
| Content Provider | MDPI |
|---|---|
| Author | Kim, Sung-Tae Yoo, Ji-Seon Lee, Min-Woo Jung, Ji-Won Jang, Jae-Hyung |
| Copyright Year | 2021 |
| Description | Near-infrared (NIR) photodetectors have interesting roles in optical fiber communications and biomedical applications. Conventional NIR photodetectors have been realized using InGaAs and Ge, of which the cut-off wavelengths exceed 1500 nm. Si-based photodetectors exhibit limited external quantum efficiency at wavelengths longer than 1000 nm. By synthesizing a $CuInSe_{2}$ compound on a glass substrate, photodetectors that can detect optical wavelengths longer than 1100 nm have been realized in this study. The bandgap energies of the $CuInSe_{2}$ thin films were tuned by varying the Cu/In ratio from 1.02 to 0.87. The longest cut-off wavelength (1309 nm) was obtained from a $CuInSe_{2}$ thin film having a Cu/In ratio of 0.87. The responsivity of the photodiode was measured under the illumination of a 1064 nm laser light. The photo responses exhibited linear response up to 2.33 mW optical illumination and a responsivity of 0.60 A/W at −0.4 V. |
| Starting Page | 92 |
| e-ISSN | 20763417 |
| DOI | 10.3390/app12010092 |
| Journal | Applied Sciences |
| Issue Number | 1 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-12-22 |
| Access Restriction | Open |
| Subject Keyword | Applied Sciences Optics Cuinse2 Photodetector Near Infrared Bandgap Energy Cut-off Wavelength |
| Content Type | Text |
| Resource Type | Article |
