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Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories
| Content Provider | MDPI |
|---|---|
| Author | Jean-Philippe, Soulié Ramesh, Sivaramakrishnan Ajaykumar, Arjun Ragnarsson, Lars-Åke Breuil, Laurent Hajjam, Gabriel Khalil El Kaczer, Ben Belmonte, Attilio Nyns, Laura Bosch, Geert Van Den Rosmeulen, Maarten |
| Copyright Year | 2021 |
| Description | We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of different thermal treatments on the work function and linked any shift in the work function, leading to an effective work function, to the dipole formation at the metal/high-k and/or $high-k/SiO_{2}$ interface. We corroborated the findings with the erase performance of metal/high-k/ONO/Si (MHONOS) capacitors that are identical to the gate stack in three-dimensional (3D) NAND flash. We demonstrate that though the work function extraction is convoluted by the dipole formation, the erase performance is not significantly affected by it. |
| Starting Page | 1084 |
| e-ISSN | 2072666X |
| DOI | 10.3390/mi12091084 |
| Journal | Micromachines |
| Issue Number | 9 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-09-08 |
| Access Restriction | Open |
| Subject Keyword | Micromachines Work Function Effective Work Function Dipole Metal Gate High-k Sio2 Interfacial Reaction Mhonos Erase Performance 3d Nand Flash Memory |
| Content Type | Text |
| Resource Type | Article |
