NDLI: Reactive Sputtering Deposition of Epitaxial TiC Film on Si (100) Substrate

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Reactive Sputtering Deposition of Epitaxial TiC Film on Si (100) Substrate

Content Provider	MDPI
Author	Fang, Yu-Siang Do, Thi Hien Chiu, Kun-An Chen, Wei-Chun Chang, Li
Copyright Year	2020
Description	Epitaxial (100) TiC film deposition on Si (100) substrate by direct current magnetron reactive sputtering of a metallic Ti target with 3%–6% $CH_{4}$ in Ar gas was investigated. X-ray diffraction and cross-sectional scanning transmission electron microscopy (STEM) reveal that epitaxial cubic TiC can be grown on the Si substrate by domain matching epitaxy in 5/4 ratio with the epitaxial relationship of TiC (100)[0 $1¯$ 1] // Si (100)[0 $1¯$ 1]. For sputtering with 3% and 4% $CH_{4}$, the deposited films are found to consist of both TiC and metallic Ti phases. Increasing the $CH_{4}$ flow ratio to 5% results in a deposited film completely consisting of TiC without metallic Ti phase. The crystallinity of the deposited TiC is also improved with increasing the $CH_{4}$ ratio to 5%. X-ray photoelectron spectroscopy shows that the [C]/[Ti] atomic ratio in TiC is nearly close to 1 for growth with 5% $CH_{4}$ flow ratio and above. The measured electrical resistivities of the deposited films also increase from 41 to 153 μΩ·cm with increasing the $CH_{4}$ ratio from 3% to 6%. With film growth beyond 50 nm thickness, it is shown that some disoriented TiC grains are formed.
Starting Page	647
e-ISSN	20796412
DOI	10.3390/coatings10070647
Journal	Coatings
Issue Number	7
Volume Number	10
Language	English
Publisher	MDPI
Publisher Date	2020-07-05
Access Restriction	Open
Subject Keyword	Coatings Coatings and Films Tic Si Substrate Epitaxial Growth Reactive Magnetron Sputtering
Content Type	Text
Resource Type	Article

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