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Pt Modified $Sb_{2}Te_{3}$ Alloy Ensuring High−Performance Phase Change Memory
| Content Provider | MDPI |
|---|---|
| Author | Qiao, Yang Zhao, Jin Sun, Haodong Song, Zhitang Xue, Yuan Li, Jiao Song, Sannian |
| Copyright Year | 2022 |
| Description | Phase change memory (PCM), due to the advantages in capacity and endurance, has the opportunity to become the next generation of general−purpose memory. However, operation speed and data retention are still bottlenecks for PCM development. The most direct way to solve this problem is to find a material with high speed and good thermal stability. In this paper, platinum doping is proposed to improve performance. The 10-year data retention temperature of the doped material is up to 104 °C; the device achieves an operation speed of 6 ns and more than 3 × $10^{5}$ operation cycles. An excellent performance was derived from the reduced grain size (10 nm) and the smaller density change rate (4.76%), which are less than those of $Ge_{2}Sb_{2}Te_{5}$ (GST) and $Sb_{2}Te_{3}$. Hence, platinum doping is an effective approach to improve the performance of PCM and provide both good thermal stability and high operation speed. |
| Starting Page | 1996 |
| e-ISSN | 20794991 |
| DOI | 10.3390/nano12121996 |
| Journal | Nanomaterials |
| Issue Number | 12 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-06-10 |
| Access Restriction | Open |
| Subject Keyword | Nanomaterials Phase Change Memory Phase Change Material High Speed Thermal Stability |
| Content Type | Text |
| Resource Type | Article |
