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Quantification of High Resolution Pulsed RF GDOES Depth Profiles for $Mo/B_{4}$C/Si Nano-Multilayers
| Content Provider | MDPI |
|---|---|
| Author | Yang, Hao Lian, Songyou Chapon, Patrick Song, Yibing Wang, Jiangyong Xu, Congkang |
| Copyright Year | 2021 |
| Description | Pulsed-radio frequency glow discharge optical emission spectrometry (Pulsed-RF-GDOES) has exhibited great potential for high resolution (HR) depth profiling. In this paper, the measured GDOES depth profile of 60 × Mo (3 $nm)/B_{4}$C (0.3 nm)/Si (3.7 nm) was quantified by employing the newly extended Mixing-Roughness-Information depth (MRI) model. We evaluated the influences of the thickness and sputtering rate on the depth profile of very thin layers. We demonstrated that a method using the full width at half maximum (FWHM) value of the measured time-concentration profile for determining the sputtering rate and the corresponding thickness was not reliable if preferential sputtering took place upon depth profiling. |
| Starting Page | 612 |
| e-ISSN | 20796412 |
| DOI | 10.3390/coatings11060612 |
| Journal | Coatings |
| Issue Number | 6 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-05-21 |
| Access Restriction | Open |
| Subject Keyword | Coatings Nuclear Energy and Engineering Gdoes Depth Profiling Preferential Sputtering Mri Model Nano-multilayers |
| Content Type | Text |
| Resource Type | Article |
