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High-κ van der Waals Oxide $MoO_{3}$ as Efficient Gate Dielectric for $MoS_{2}$ Field-Effect Transistors
| Content Provider | MDPI |
|---|---|
| Author | Wang, Junfan Lai, Haojie Huang, Xiaoli Liu, Junjie Lu, Yueheng Liu, Pengyi Xie, Weiguang |
| Copyright Year | 2022 |
| Description | Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide $MoO_{3}$ is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the good response of $MoS_{2}$ to visible light, we obtained a field effect transistor for photodetection. In general, the device exhibits a threshold voltage near 0 V, Ion/Ioff ratio of $10^{5}$, electron mobility about 85 $cm^{2}$ $V^{−1}$ $s^{−1}$ and a good response to visible light, the responsivity is near 5 A/W at low laser power, which shows that $MoO_{3}$ is a potential material as gate dielectric. |
| Starting Page | 5859 |
| e-ISSN | 19961944 |
| DOI | 10.3390/ma15175859 |
| Journal | Materials |
| Issue Number | 17 |
| Volume Number | 15 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-08-25 |
| Access Restriction | Open |
| Subject Keyword | Materials Mos2 Moo3 Fet Photodetector Field Effect Transistor Gate Dielectric Transistor Van Der Waals Materials |
| Content Type | Text |
| Resource Type | Article |
