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High-Frequency Low-Current Second-Order Bandpass Active Filter Topology and Its Design in 28-nm FD-SOI CMOS
| Content Provider | MDPI |
|---|---|
| Author | Ballo, Andrea Grasso, Alfio Dario Pennisi, Salvatore Venezia, Chiara |
| Copyright Year | 2020 |
| Description | Fully Depleted Silicon on Insulator (FD-SOI) CMOS technology offers the possibility of circuit performance optimization with reduction of both topology complexity and power consumption. These advantages are fully exploited in this paper in order to develop a new topology of active continuous-time second-order bandpass filter with maximum resonant frequency in the range of 1 GHz and wide electrically tunable quality factor requiring a very limited quiescent current consumption below 10 μA. Preliminary simulations that were carried out using the 28-nm FD-SOI technology from STMicroelectronics show that the designed example can operate up to 1.3 GHz of resonant frequency with tunable Q ranging from 90 to 370, while only requiring 6 μA standby current under 1-V supply. |
| Starting Page | 27 |
| e-ISSN | 20799268 |
| DOI | 10.3390/jlpea10030027 |
| Journal | Journal of Low Power Electronics and Applications |
| Issue Number | 3 |
| Volume Number | 10 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2020-09-03 |
| Access Restriction | Open |
| Subject Keyword | Journal of Low Power Electronics and Applications Hardware and Architecturee Bandpass Filter Cmos Fd-soi Quality Factor Low Current Micropower |
| Content Type | Text |
| Resource Type | Article |
