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| Content Provider | MDPI |
|---|---|
| Author | Khan, Muhammad Williams, John |
| Abstract | Nanopore-based analysis is currently an area of great interest in many disciplines with the potential for exceptionally versatile applications in medicine. This work presents a novel step towards fabrication of a single solid-state nanopore (SSSN) in a thin silicon membrane. Silicon nanopores are realized using multistep processes on both sides of n-type silicon-on-insulator (SOI) <100> wafer with resistivity 1–4 Ω·cm. An electrochemical HF etch with low current density (0.47 mA/cm2) is employed to produce SSSN. Blue LED is considered to emit light in a narrow band region which facilitates the etching procedure in a unilateral direction. This helps in production of straight nanopores in n-type Si. Additionally, a variety of pore diameters are demonstrated using different HF concentrations. Atomic force microscopy is used to demonstrate the surface morphology of the fabricated pores in non-contact mode. Pore edges exhibit a pronounced rounded shape and can offer high stability to fluidic artificial lipid bilayer to study membrane proteins. Electrochemically-fabricated SSSN has excellent smoothness and potential applications in diagnostics and pharmaceutical research on transmembrane proteins and label free detection. |
| File Size | 4270080 |
| Ending Page | 7400 |
| Page Count | 12 |
| Starting Page | 7389 |
| File Format | |
| e-ISSN | 19961944 |
| DOI | 10.3390/ma8115390 |
| Journal | Materials |
| Issue Number | 11 |
| Volume Number | 8 |
| Language | English |
| Publisher Date | 2015-11-03 |
| Access Restriction | Open |
| Subject Keyword | solid state nanopore silicon electrochemical etching HF atomic force microscopy |
| Content Type | Text |
| Resource Type | Article |
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