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| Content Provider | MDPI |
|---|---|
| Author | Marigó, Eloi Sansa, Marc Pérez-Murano, Francesc Uranga, Arantxa Barniol, Núria |
| Abstract | A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology. |
| File Size | 2860032 |
| Ending Page | 17047 |
| Page Count | 12 |
| Starting Page | 17036 |
| File Format | |
| e-ISSN | 14248220 |
| DOI | 10.3390/s150717036 |
| Journal | Sensors |
| Issue Number | 7 |
| Volume Number | 15 |
| Language | English |
| Publisher Date | 2015-07-14 |
| Access Restriction | Open |
| Subject Keyword | NEMS CMOS-NEMS mechanical resonators piezoresistive transduction polysilicon nanowires |
| Content Type | Text |
| Resource Type | Article |
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