Electroluminescence From GaN-polymer Heterojunction

Content Provider	Indian Institute of Science (IISc)
Author	Chitara, Basant Lal, Nidhi Krupanidhi, S. B. Rao, C. N. R.
Copyright Year	2011
Abstract	Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). (C) 2011 Elsevier B.V. All rights reserved.
File Format	PDF
Journal	PeerReviewed
Language	English
Publisher	Elsevier Science BV
Publisher Date	2011-12-01
Access Restriction	Authorized
Subject Keyword	Materials Research Centre
Content Type	Text
Resource Type	Article