A Study Of Ferroelectric Thin Films Deposited On A $LaNiO_3$ Barrier Electrode By Nebulized Spray Pyrolysis

Content Provider	Indian Institute of Science (IISc)
Author	Murugavel, P. Sharma, Rajat Raju, A. R. Rao, C. N. R.
Copyright Year	2000
Abstract	Thin films of ferroelectric $PbTiO_3$ (PT) and $Pb(Zr_{0.5}Ti_{0.5})O_3$ (PZT) as well as antiferroelectric $PbZrO_3$ (PZ) have been prepared on $LaNiO_3 SiO_2 Si$ substrates by nebulized spray pyrolysis (NSP) of metal-organic precursors. The metallic $LaNiO_3$ (LNO) electrode layer was also deposited by NSP. The ferroelectric films obtained show satisfactory morphology and desirable dielectric properties. Typical values of the coercive field, remnant polarization and dielectric constant (300 K) for the $PT LNO SiO_2 Si$ film are 170 kV $cm^{-1}$, 22 \mu C $cm^{-2}$ and 210, respectively, with the corresponding values for the $PZT LNO SiO_2 Si$ film being 120 kV $cm^{-1}$, 13 \mu C $cm^{-2}$ and 540, respectively. The $PZ LNO SiO_2 Si$ film shows typical antiferroelectric characteristics including the electric-field induced reversible antiferroelectric—ferroelectric transition. The various films deposited on $LNO SiO_2 Si$ by NSP are comparable in all respects to those prepared on $Pt Ti SiO_2 Si$ by the same technique.
File Format	PDF
Journal	PeerReviewed
Language	English
Publisher	Institute of Physics
Publisher Date	2000-04-01
Access Restriction	Authorized
Subject Keyword	Materials Research Centre
Content Type	Text
Resource Type	Article