NDLI: Comparison of SiC MOSFET-based and GaN HEMT-based high-efficiency high-power-density 7.2 kW EV battery chargers

Content Provider	IET Digital Library
Author	Taylor, Allan Lu, Juncheng Zhu, Liyan Bai, Kevin ( Hua) Ammond, Matt Mc Brown, Alan
Abstract	As two exemplary candidates of wide-bandgap devices, SiC MOSFETs and GaN HEMTs are regarded as successors of Si devices in medium-to-high-voltage (>1200 V) and low-voltage (<650 V) domains, respectively, thanks to their excellent switching performance and thermal capability. With the introduction of 650 V SiC MOSFETs and GaN HEMTs, the two technologies are in direct competition in <650 V domains, such as Level 2 battery chargers for electric vehicles (EVs). This study applies 650 V SiC and GaN to two 240 VAC/7.2 kW EV battery chargers, respectively, aiming to provide a head-to-head comparison of these two devices in terms of overall efficiency, power density, thermal performance, and cost. The charger essentially is an indirect matrix converter with a dual-active-bridge stage handling the power factor correction and power delivery simultaneously. These two chargers utilise the same control strategy, varying the phase-shift and switching frequency to cover the wide input range (80–260 VAC) and wide output range (200 V–450 VDC). Experimental results indicated that at the same efficiency level, the GaN charger is smaller, more efficient and cheaper, while the SiC charger has a better thermal performance.
Starting Page	1849
Ending Page	1857
Page Count	9
ISSN	17554535
Volume Number	11
e-ISSN	17554543
Issue Number	Issue 11, Sep (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/11/11
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2017.0467
Journal	IET Power Electronics
Publisher Date	2018-05-16
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Automobile Electronics Battery Chargers Battery Powered Vehicle Control Strategy Dual-active-bridge Stage Handling Electric Vehicle Charging Gallium Compound GaN GaN HEMT-based High-efficiency High-power-density EV Battery Charger Head-to-head Comparison HEMT Integrated Circuit III-V SemiConductor Indirect Matrix Converter Matrix Converter Medium-to-high-voltage MOS Integrated Circuit Phase-shift Frequency Power 7.2 KW Power Delivery Power Density Power Factor Correction Power Integrated Circuit SiC SiC MOSFET-based High-efficiency High-power-density EV Battery Charger Silicon Compound Switching Circuit Switching Converter Switching Performance Thermal Capability Thermal Performance Voltage 1200.0 V Voltage 200.0 V to 450 V Voltage 650.0 V Wide Band Gap SemiConductor Wide Output Range Wide-bandgap Device
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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