NDLI: Concept and numerical simulations of a widely tunable GaAs-based sampled-grating diode laser emitting at 976 nm

Content Provider	IET Digital Library
Author	Tawfieq, Mahmoud Wenzel, Hans Brox, Olaf Casa, Pietro Della Sumpf, Bernd Tränkle, Günther
Abstract	Tunable diode lasers are essential components in various optical systems. The authors present a concept and simulations of a four-section, widely tunable GaAs-based sampled-grating (SG) distributed-Bragg reflector (DBR) laser emitting at 976 nm. This work includes the design approach of the SG reflectors and the simulation of the behaviour of the modes in the active cavity during the wavelength tuning process. Parameters such as the lasing wavelength, threshold current and the gain of the lasing and of the adjacent side modes during the tuning are presented. The numerical results presented suggest a tunability of at least 17 nm, with a threshold current change of only 2.5 mA and single-mode operation over the entire tuning range, without the need of simultaneous adjustments of the phase section. Finally, the authors present early experimental results of a developed GaAs-based vertical structure, providing a high coupling coefficient of κ = 240 c m − 1 , thus suitable for implementation of an SG-DBR laser design.
Starting Page	73
Ending Page	78
Page Count	6
ISSN	17518768
Volume Number	11
e-ISSN	17518776
Issue Number	Issue 2, Apr (2017)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-opt/11/2
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-opt.2016.0068
Journal	IET Optoelectronics
Publisher Date	2017-01-30
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Active Cavity Coupling Coefficient DBR Lasers Design of Specific Laser System Distributed Bragg Reflector Lasers GaAs GaAs-based Vertical Structure Gallium Arsenide III-V SemiConductor Laser Beam Modulation Laser Cavity Resonator Laser Mode Laser Resonator And Cavities Laser Tuning Lasing Action in SemiConductor Lasing Gain Lasing Wavelength Mode Locking And Tuning Numerical Simulation Pulsing And Switching Quantum Well Lasers Semiconductor Laser Side Mode Single-mode Operation Threshold Current Tunable GaAs-based Sampled-grating Diode Laser Tunable GaAs-based Sampled-grating Distributed-Bragg Reflector Laser Wavelength 976 Nm Wavelength Tuning Process
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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