NDLI: Ultraviolet detection by Cr doped In2O3 TF

Content Provider	IET Digital Library
Author	Ghosh, Anupam Kannoje, Prakhar Mondal, Aniruddha
Abstract	Synthesis of indium (III) oxide (In2O3) and chromium (Cr)-doped In2O3 thin film (TF) by spin-on technique was reported. The device showed the Schottky nature under dark and light illumination condition. The ideality factor of the diode showed an exponential increase with the decrease in temperature. The low ideality factor of ∼4 was calculated at 300 K. The barrier height of the device increased with temperature. The Cr-doped In2O3 TF device possessed high sensitivity compared with undoped In2O3 TF at −2 V all over the temperature range from 10 to 300 K. The Cr-doped In2O3 TF-based device showed extremely high sensitivity toward ultraviolet (320 nm) light as compared with visible light.
Starting Page	172
Ending Page	176
Page Count	5
ISSN	17518768
Volume Number	13
e-ISSN	17518776
Issue Number	Issue 4, Aug (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-opt/13/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-opt.2018.5018
Journal	IET Optoelectronics
Publisher Date	2019-01-22
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Barrier Height Bolometers Chromium Chromium-doped Indium (III) Oxide Thin Film Dark Illumination Condition Detection of Radiation In2O3:Cr Indium Compound Junction And Barrier Diode Light Illumination Condition Low Ideality Factor Optical Fabrication Optical Film Optical Material PhotoDetector Photoelectric Cell Schottky Barriers Schottky Diode Schottky Nature Semiconductor Metal InterFace Semiconductor Thin Film Spin-on Technique Submillimetre Wave Detection Surface Grinding Temperature 10.0 K to 300.0 K Thin Film Circuit Thin Film Device Thin Film-based Device Ultraviolet Detector Ultraviolet Light Voltage -2.0 V Wavelength 320.0 Nm Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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