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Content Provider | IET Digital Library |
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Author | Bhatt, Darshak Mukherjee, Jayanta Redouté, Jean Michel |
Abstract | This study proposes a wide-band low-power low-noise amplifier (LNA) and switched transconductance (SwGm) mixer. The proposed mixer is realised with a fully differential complementary metal oxide semiconductor (CMOS) SwGm configuration. It provides a high bandwidth with a low noise figure (NF) and consumes a low amount of power. Moreover, an ultra-wideband LNA is designed by using a split-load inductive technique. The combination of the LNA and the mixer has provided competitive results in terms of power, bandwidth, NF, and gain. The LNA + mixer was designed and fabricated in the 65 nm radio frequency-CMOS technology. The proposed LNA achieves 2.5 ± 0.1 dB of NF and 17 ± 1.5 dB of gain over the band of 1–10 GHz and consumes 4.8 mW of power. The proposed SwGm mixer shows a maximum conversion gain (CG) of 10 dB, a minimum NF of 10 dB, and more than −8.5 dBm of third-order input intercept point (IIP3) over the band of 10 GHz. The implemented LNA + mixer achieves 19 dB of CG, 5 dB of NF, and −6 dBm of IIP3. The on-chip LNA and mixer consume only 1.65 mW and 530 μW, respectively, from a 1.2 V supply voltage. |
Starting Page | 1736 |
Ending Page | 1744 |
Page Count | 9 |
ISSN | 17518725 |
Volume Number | 12 |
e-ISSN | 17518733 |
Issue Number | Issue 10, Aug (2018) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/iet-map/12/10 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/iet-map.2017.0798 |
Journal | IET Microwaves, Antennas & Propagation |
Publisher Date | 2018-04-17 |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | Amplifiers CMOS CMOS Integrated Circuit Demodulator Discriminators And Mixers Frequency 1 GHz to 10 GHz Fully Differential Complementary Metal Oxide Semiconductor LNA Design Low Noise Amplifier Low-power Switched Transconductance Mixer Mixers (Circuit) Modulator Noise Figure 10 DB Power 4.8 MW Size 65 Nm Split-load Inductive Technique Voltage 1.2 V Wi-Fi Widewide-band Low-power Low-noise Amplifier WiMax |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering |
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