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| Content Provider | IET Digital Library |
|---|---|
| Author | Chaudhary, Swati Yadav, Varsha Negi, Chandra Mohan Singh Gupta, Saral K. |
| Abstract | Herein, this work scrutinises the charge transport properties of solution-processed methylammonium lead iodide (MAPbI3) perovskite-based hole only device through the DC current–voltage and AC impedance spectroscopy analysis. The device shows a significant increase in the current levels under illumination. Key diode parameters were estimated from the dark I–V curves. The dominance of Ohm's law at low bias, space charge limited conduction (SCLC) followed trap controlled SCLC at higher applied bias was observed from charge transport analysis. From the region dominated by the trap free SCLC, the hole mobility of 4.02 × 10−6 cm2V−1s−1 inside the perovskite layer was extracted. The measured impedance spectrum was analysed by fitting it with the equivalent circuit model, and the various physical parameters, such as charge transport resistance, recombination resistance and associated capacitance were approximated for the device. |
| Starting Page | 136 |
| Ending Page | 139 |
| Page Count | 4 |
| Volume Number | 15 |
| e-ISSN | 17500443 |
| Issue Number | Issue 3, Mar (2020) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/15/3 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2019.0597 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2020-03-04 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | AC Impedance Spectroscopy Analysis Capacitance Charge Transport Analysis Charge Transport Property Charge Transport Resistance Current Levels Dark Conductivity Dark I-V Curves DC Current-voltage Analysis Design And Testing Diode Parameter Electron-hole Recombination Equivalent Circuit Equivalent Circuit Model Hole Mobility Impedance Analysis Measured Impedance Spectrum Ohm's Law Organic SemiConductor Organic-inorganic Hybrid Material Perovskite Layer Recombination Resistance Semiconductor Device Model Semiconductor Device Modelling Solution-processed Methylammonium Lead Iodide Perovskite-based Hole Only Device Solution-processed Perovskite-based Device Space Charge Limited Conduction Trap Free SCLC |
| Content Type | Text |
| Resource Type | Article |
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