NDLI: Effects of periodic trench structure on cathodo-luminescence in InGaN/GaN multi-quantum wells

Content Provider	IET Digital Library
Author	Kim, G. Kim, S. W. Kim, J. H. Park, E. Park, B. G.
Abstract	To reduce strain and the quantum-confined Stark effect (QCSE), periodic trenches in an InGaN/GaN multi-quantum well (MQW) are patterned by electron-beam (e-beam) lithography and the inductively-coupled plasma (ICP) dry etching process. The effects of the fabricated structure are investigated by measuring cathodo-luminescence (CL) spectra and comparing it with the data of an as-grown sample without trench patterns. The peak wavelength of the prepared samples is clearly blue-shifted, and it is confirmed that the strain and the QCSE are reduced by the effects of the trench structures. It is also confirm that the peak intensity of CL spectra shows a maximum when 90% of the active region is remaining, because the trench patterns reduce the light emitting area as well as the strain and the QCSE.
Starting Page	1012
Ending Page	1014
Page Count	3
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 14, Jul (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/14
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.1567
Journal	Electronics Letters
Publisher Date	2014-06-27
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Blue-shift Cathodoluminescence Cathodoluminescence Spectra Cathodoluminescence, Ionoluminescence (condensed Matter) E-beam Lithography Electro optical Effect (condensed Matter) Electron Beam Lithography Electron-beam Lithography Gallium Compound ICP Dry Etching Process II-VI And III-V SemiConductor III-V SemiConductor Indium Compound Inductively-coupled Plasma Dry Etching Process InGaN-GaN Light Emitting Area Low-Dimensional Structure: Growth, Structure And Nonelectronic Property Luminescent Material Multiquantum Wells Optical Property of II-VI And III-V SemiConductor Periodic Trench Structure Effect Plasma Application in Manufacturing And Material Processing QCSE Quantum Confined Stark Effect Quantum Wells And Related Structure Quantum-confined Stark Effect Semiconductor Growth Semiconductor Quantum Wells Semiconductor Superlattices Semiconductor Technology Spectral Line Shift Sputter Etching Surface Topography Measurement Surface Treatment And Coating Technique Trench Pattern Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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