NDLI: Reconfigurable package integrated 20 W RF power GaN HEMT with discrete thick-film MIM BST varactors

Content Provider	IET Digital Library
Author	Preis, S. Wiens, A. Maune, H. Heinrich, W. Jakoby, R. Bengtsson, O.
Abstract	A novel package integrated solution for gallium nitride high-electron-mobility transistors with an electronically two-dimensional reconfigurable L-section matching network is presented. Thick-film barium-strontium-titanate (BST) varactors are used to realise a tunability of the load impedance of 1:2 in resistive and 1:1.5 in reactive parts, respectively, applying tuning voltages of up to 200 V. The tuneable module achieves a peak output power of 43.2 dBm (20.9 W). Comparison with simulated results using field simulations and a large-signal model shows good agreement in terms of output power and power added efficiency and thus proves the concept of using metal–insulator–metal BST varactors for reconfigurability.
Starting Page	296
Ending Page	298
Page Count	3
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 4, Feb (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.4109
Journal	Electronics Letters
Publisher Date	2016-01-28
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Barium Compound Capacitor Discrete Thick-film Metal-insulator-metal Barium-strontium-titanate Varactor Electronically Two-dimensional Reconfigurable L-section Matching Network Field Effect Device Field Simulation Gallium Compound Gallium Nitride High-electron-mobility Transistor GaN-Ba0.8Sr0.2TiO3 High Electron Mobility Transistors III-V SemiConductor Large-signal Model Load Impedance Tunability Metal-insulator-metal BST Varactor MIM Device Output Power Power 20 W Power 20.9 W Power Added Efficiency Radio Link And Equipment Reconfigurable Package Integrated Radio Frequency Software Radio Strontium Compound Thick Film Capacitor Tuneable Module Varactors Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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