NDLI: Influence of AC signal oscillator level on effective mobility measurement by split C

Content Provider	IET Digital Library
Author	Karatsori, T. A. Theodorou, C. G. Dimitriadis, C. A. Ghibaudo, G.
Abstract	The impact of the AC signal oscillator level on the effective mobility measurement by split C–V technique in MOSFETs is investigated. It is found that, due to strong nonlinearity below threshold, the gate-to-channel capacitance and, by turn, the channel inversion charge increases linearly with the oscillator level. As a consequence, the extracted effective mobility decreases linearly with the oscillator level, resulting in a huge underestimation of the effective mobility in weak inversion. A physical model explaining these behaviours is developed, which enables to obtain a quantitative description of both inversion charge and effective mobility variations with the oscillator level and the gate voltage.
Starting Page	1492
Ending Page	1493
Page Count	2
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 17, Aug (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/17
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2016.1715
Journal	Electronics Letters
Publisher Date	2016-07-20
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	AC Signal Oscillator Level Capacitance Carrier Mobility Channel Inversion Charge Design And Testing Effective Mobility Measurement Equivalent Circuit Gate Voltage Gate-to-channel Capacitance Insulated Gate Field Effect Transistors MOSFET Nonlinearity Oscillator Physical Model Semiconductor Device Measurement Semiconductor Device Model Semiconductor Device Modelling Split C–V Technique
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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