NDLI: High-frequency InAlN/GaN HFET with f max over 400 GHz

Content Provider	IET Digital Library
Author	Fu, Xing Chang Lv, Yuanjie Zhang, Li Jiang Zhang, Tong Li, Xian Jie Song, Xubo Zhang, Zhirong Fang, Yulong Feng, Zhihong
Abstract	Ultra-thin InAlN/GaN heterostructure field-effect transistors (HFETs) having high maximum oscillation frequency (f max) are fabricated by scaling lateral dimensions. A 3 nm GaN cap layer is adopted to reduce the electron density and suppress the short-channel effects. Non-alloyed regrown n+-GaN ohmic contacts with total ohmic resistance (R tot) of 0.13 Ω.mm is also introduced into the device, in which the virtual source-to-drain distance is 600 nm. T-shaped gate with 40 nm length is formed in the centre of the source-to-drain region by self-aligned e-beam lithography. The peak extrinsic transconductance (g m) reaches 956 mS/mm. Most of all, a high f max of 405 GHz is obtained, which is the highest value among the reported InAlN/GaN HFETs. These obtained results mean that the InAlN/GaN HFETs having reliability should be still suitable for G-band (140–220 GHz) power-amplifier application with further optimisation.
Starting Page	783
Ending Page	785
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 12, Jun (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/12
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.0247
Journal	Electronics Letters
Publisher Date	2018-05-08
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Aluminium Compound Electron Beam Lithography Electron Density Field Effect Device Frequency 140.0 GHz to 220.0 GHz G-band Power-amplifier Application Gallium Compound GaN Cap Layer High Electron Mobility Transistors High Maximum Oscillation Frequency High-frequency InAlN-GaN HFET III-V SemiConductor InAlN-GaN Indium Compound Lateral Dimension Scaling Lithography Millimetre Wave Field Effect Transistors Nonalloyed Regrown Ohmic Contacts Ohmic Contacts Peak Extrinsic Transconductance Resistivity 0.13 Ohmm Self-aligned E-beam Lithography Semiconductor Heterojunction Semiconductor Technology Short-channel Effect Size 3.0 Nm Size 40.0 Nm Size 600.0 Nm Solid State Microwave Circuit And Device Submillimetre Wave Transistors T-shaped Gate Total Ohmic Resistance UHF Power Amplifiers Ultra-thin InAlN-GaN Heterostructure Field-effect Transistors Virtual Source-to-drain Distance Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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