NDLI: Built-in bias fields for retention stabilisation in hafnia-based ferroelectric tunnel junctions

Content Provider	IET Digital Library
Author	Max, B. Hoffmann, M. Slesazeck, S. Mikolajick, T.
Abstract	Ferroelectric tunnel junctions have recently attracted a lot of research interest, not only for memory operation but also for e.g. neuromorphic computing. Retention characteristics of these devices are of utmost importance in many applications. The authors have recently demonstrated the feasibility of double-layered ferroelectric tunnel junctions where the ferroelectric hafnium zirconium oxide acts as the memory layer and the dielectric aluminium oxide as the tunnelling barrier. The depolarisation field from the unscreened polarisation charges that is introduced by this structure causes serious limitations on the retention behaviour due to the unintentional back-switching of ferroelectric domains. This leads to a diminishing memory window over time. By using a built-in bias field from different work function metal electrodes, in this case platinum and titanium nitride with 0.85 eV difference, one can shift the polarisation hysteresis curve and counteract the electric depolarisation field. This leads to a more stable on-current over time while only marginally increasing the off-current degradation. Extrapolation to ten years shows a much larger memory window compared to the symmetric metal electrode structure.
Starting Page	1108
Ending Page	1110
Page Count	3
ISSN	00135194
Volume Number	56
e-ISSN	1350911X
Issue Number	Issue 21, Oct (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/56/21
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2020.1529
Journal	Electronics Letters
Publisher Date	2020-09-07
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	AlO Aluminium Compound Back-switching Built-in Bias Field Depolarization Effects Dielectric Aluminium Oxide Dielectric Depolarisation Dielectric Hysteresis Dielectric Polarisation Dielectric Polarization Diminishing Memory Window Double-layered Ferroelectric Tunnel Junctions Electric Depolarisation Field Electric Domains Ferroelectric Domain Ferroelectric Domain Structure And Effect; Hysteresis Ferroelectric Hafnium Zirconium Oxide Ferroelectricity Hafnia-based Ferroelectric Tunnel Junctions Hafnium Compound HfZrO Memory Layer Off-current Degradation On-current Polarisation Hysteresis Curve Retention Behaviour Retention Stabilisation Surface Current Attenuation Symmetric Metal Electrode Structure Titanium Nitride Tunnelling Tunnelling Barrier Tunnelling: General (electronic Transport) Unscreened Polarisation Charges Work Function Zirconium Compound
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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